[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-20] Effect of annealing gas in Ga thermal diffusion for reduced resistive ZnO nanoparticle layers

〇Toshiyuki Yoshida¹, Maruful Islam Md², Yasuhisa Fujita¹ (1.Shimane Univ. Nat. Sci&Technol, 2.Shimane Univ. Sci.&Eng.)

Keywords:semiconductor particle layer, Zinc Oxide, Ga-doping

Objective of this study is formation of ZnO nano-particle layers and their application for channel layers of thin-film-transistors. Recently, we demonstrated the operations of not only n-channel TFTs but also p-channel TFTs, however, extremely high resistivity (Mega Ohm/sq ~ Giga Ohm/sq) is one of critical issues for the proceeding. In the previous presentation, by annealing the n-ZnO nano-particles with Ga₂O₃ particles, we tried Ga-doping and achieved dramatically reduction of resistivity of particle layers. Here, we will present about the effects of annealing gas in Ga-doping.