[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-21] Evaluation of electrical properties of ITO thin film formed by PLD method by annealing process

〇Syogo Iwana¹, Sujun Guan¹, Syuji Komuro², Xinwei Zhao¹ (1.Tokyo Univ of Sci, 2.Toyo Univ)

Keywords:Light Emmiting Diode