[9a-W541-1~12] 15.4 III-V-group nitride crystals

△ [9a-W541-12] Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

〇Takashi Nakano¹, Kenta Chokawa¹, Masaaki Araidai^2,1, Kenji Shiraishi^2,1, Atsushi Oshiyama², Shigeyoshi Usami¹, Akira Kusaba³, Yoshihiro Kangawa^4,2, Atsushi Tanaka², Yoshio Honda^2,1, Hiroshi Amano^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Engineering, Kyushu Univ., 4.Research Institute for Applied Mechanics Kyushu University)

Keywords:GaN, threading dislocations, first-principles calculations