MOCVD growth of n-GaN cap layer on MQS-LEDs

Nanami Goto; Naoki Sone; Kazuyoshi Iida; Weifang Lu; Atsushi Suzuki; Kyohei Nokimura; Minoru Takebayashi; Hideki Murakami; Mizuki Terazawa; Masaki Ohya; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[9a-W541-1~12] 15.4 III-V-group nitride crystals

Sat. Mar 9, 2019 9:00 AM - 12:15 PM W541 (W541)

Toru Akiyama(Mie Univ.), Tomoyuki Tanikawa(Tohoku Univ.)

9:15 AM - 9:30 AM

△ [9a-W541-2] MOCVD growth of n-GaN cap layer on MQS-LEDs

〇Nanami Goto¹, Naoki Sone^1,3, Kazuyoshi Iida^1,4, Weifang Lu¹, Atsushi Suzuki¹, Kyohei Nokimura¹, Minoru Takebayashi¹, Hideki Murakami¹, Mizuki Terazawa¹, Masaki Ohya^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing CO., 4.Toyoda Gosei Co.)

Keywords:Crystal growth, MOCVD