Increase in the photo-sensitivity of Silicon detector using a near-field assisted excitation

Tatsuya Takemori; Kota Saichi; Takumi Sato; Tatsuro Ogamoto; Shohei Chiashi; Shigeo Maruyama; Masashi Noda; Kazuhiro Yabana; Kenji Iida; Katsuyuki Nobusada; Takashi Yatsui

Presentation information

Oral presentation

3 Optics and Photonics » 3.12 Nanoscale optical science and near-field optics

[9a-W621-1~12] 3.12 Nanoscale optical science and near-field optics

Sat. Mar 9, 2019 9:00 AM - 12:15 PM W621 (W621)

Satoshi Ishii(NIMS), Takashi Yatsui(The University of Tokyo)

10:15 AM - 10:30 AM

[9a-W621-6] Increase in the photo-sensitivity of Silicon detector using a near-field assisted excitation

〇Tatsuya Takemori¹, Kota Saichi¹, Takumi Sato¹, Tatsuro Ogamoto¹, Shohei Chiashi¹, Shigeo Maruyama^1,2, Masashi Noda³, Kazuhiro Yabana³, Kenji Iida⁴, Katsuyuki Nobusada⁴, Takashi Yatsui¹ (1.University of Tokyo, 2.AIST, 3.University of Tsukuba, 4.Institute for Molecular Science)

Keywords:optical near-field, silicon, indirect bandgap