[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

[9p-M121-1] Uniform Avalanche Breakdown and Parallel-Plane Breakdown Fields in
GaN-on-GaN PN Diodes with Double-Side-Depleted Shallow Bevel Termination

〇Takuya Maeda¹, Tetsuo Narita², Hiroyuki Ueda², Masakazu Kanechika², Tsutomu Uesugi², Tetsu Kachi³, Tsunenobu Kimoto¹, Masahiro Horita^1,3,4, Jun Suda^1,3,4 (1.Kyoto Univ., 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ.)

Keywords:Gallium Nitride, Avalanche Breakdown, Beveled-mesa Edge Termination