The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Kozo Makiyama(Fujitsu Lab.)

2:15 PM - 2:30 PM

[9p-M121-2] Estimation of Impact Ionization Coefficients in GaN by
Photomultiplication Measurements Utilizing Franz-Keldysh Effect

Takuya Maeda1, Tetsuo Narita2, Hiroyuki Ueda2, Masakazu Kanechika2, Tsutomu Uesugi2, Tetsu Kachi3, Tsunenobu Kimoto1, Masahiro Horita1,3,4, Jun Suda1,3,4 (1.Kyoto Univ,, 2.Toyota Central R&D Labs., Inc., 3.Nagoya Univ. IMaSS, 4.Nagoya Univ,)

Keywords:Gallium Nitride, Impact Ionization Coefficient, Avalanche Multiplication