[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

[9p-M121-3] High Breakdown Capability of GaN p-n Diodes with Two-Step Mesa Structure

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)

Keywords:GaN p-n diode, Tow-step mesa structure, High breakdown capability

We studied vertical GaN p-n junction diodes using two-step mesa structure in which a part of the p-GaN layer around the anode-electrode was removed by ICP dry etching for the purpose of high breakdown capability. As a result, it was found that no breakdown occurs even after the yield at the reverse voltage of about 4.8 kV. In addition, no increase in specific on-resistances in the forward current-voltage characteristics was observed, and equivalent to those of the conventional single mesa structure diodes were obtained.