[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

[9p-M121-4] Vertical GaN p-n Diodes Fabricated on Stripe ELO GaN Substrates

〇Hiroshi Ohta¹, Naomi Asai¹, Fumimasa Horikiri², Yoshinobu Narita², Takehiro Yoshida², Tomoyoshi Mishima¹ (1.Hosei univ., 2.SICOCS)

Keywords:GaN p-n diode, Stripe ELO substrate, Low threading dislocation density

GaN p-n junction diodes were fabricated on the freestanding GaN substrates prepared by striped epitaxial lateral overgrowth (ELO) method had high threading dislocation density (TDD) region and low TDD region alternately located with period of 200 mm and device characteristics were evaluated. As a result of evaluating the variation of breakdown voltage due to the ratio which the anode electrode of the diodes were in the high TDD region, the diodes formed in the low TDD region were less variations and close to the designed breakdown voltage was obtained. On the other hand, the dispersion in the high TDD region increased.