[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

[9p-M121-6] Hall measurement of GaN-MOSFETs

〇Katsunori Ueno¹, Hiedeaki Matsuyama¹, Ryo Tanaka¹, Shinya Takashima¹, Masaharu Edo¹, Masahiro Horita², Jun Suda², Kiyokazu Nakagawa³ (1.Fuji Electric.co, 2.Nagoya Univ., 3.Univ. of Yamanashi)

Keywords:GaN, MOSFET, Hall measurement

The insulated gate and the normally-off are favorable for GaN-FETs, therefore MOS-channel control is very important technology to achieve these requirements. High MOS-channel mobility is desired for the future applications, and the investigation of the limiting factor of channel mobility is important. For this motivation, we will report the Hall measurement of GaN-MOSFET.