Fully ion implanted normally-off GaN DMOSFETs

Michitaka Yoshino; Yuto Ando; Manato Deki; Toru Toyabe; Kazuo Kuriyama; Yoshio Honda; Tomoaki Nishimura; Hiroshi Amano; Tetsu Kachi; Tohru Nakamura

Presentation information

Oral presentation

13 Semiconductors » 13.7 Compound and power electron devices and process technology

[9p-M121-1~14] 13.7 Compound and power electron devices and process technology

Sat. Mar 9, 2019 2:00 PM - 5:45 PM M121 (H121)

Kozo Makiyama(Fujitsu Lab.)

4:00 PM - 4:15 PM

[9p-M121-8] Fully ion implanted normally-off GaN DMOSFETs

〇Michitaka Yoshino¹, Yuto Ando², Manato Deki³, Toru Toyabe⁴, Kazuo Kuriyama¹, Yoshio Honda³, Tomoaki Nishimura¹, Hiroshi Amano^2,3, Tetsu Kachi³, Tohru Nakamura^1,3 (1.Hosei Univ., 2.Nagoya Univ., 3.Nagoya Univ. IMaSS, 4.Toyo Univ.)

Keywords:GaN, DMOSFET, Ion implantation

自立GaN基板にイオン注入法でｐ型とｎ型層を形成し，二重拡散金属酸化物トランジスター（DMOSFET）を作製したので，報告する．