[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-8] The origin of extreme low off-current for crystalline IGZO FET

〇Haruyuki Baba¹, Shota Mizukami¹, Kazuki Tsuda¹, Tatsuki Koshida¹, Syunpei Yamazaki¹ (1.SEL)

Keywords:oxide semiconductor, IGZO, FET

FETs including an active layer containing a c-axis aligned crystalline IGZO (CAAC-IGZO) are characterized by their extremely low off-state leakage current on the order of yoctoamperes per micrometer (10^-24 A/mm). Focusing on the fact that defects in crystals in semiconductors are a cause of leakage current, we performed device simulation to determine the effect of defects in CAAC-IGZO on off-state leakage current and the temperature dependence of off-state leakage current. Details of the examination and our observations will be reported at the meeting.