The 66th JSAP Spring Meeting, 2019

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13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[9p-S221-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Sat. Mar 9, 2019 1:45 PM - 5:45 PM S221 (S221)

Jiro Ida(Kanazawa Inst. of Tech.), Noriyuki Taoka(AIST)

3:45 PM - 4:00 PM

[9p-S221-9] A Numerical Model of ReRAM Reliability based on Lattice Random Walk

〇Shinpei Matsuda1, Ken Takeuchi1 (1.Chuo Univ.)

Keywords:ReRAM

Reliability of ReRAM with oxygen vacancy filament, especially its data-retention reliablity, is discussed based on a numerical diffusion model utilizing lattice random walk.