[9p-S422-1~13] 15.1 Bulk crystal growth

[9p-S422-1] [INVITED] Collaboration between experiment and numerical studies:
How numerical simulations can predict defects in crystals?

〇Koichi Kakimoto¹ (1.RIAM, Kyushu Univ.)

Keywords:semiconductors, numerical simulation

Numerical simulation is now opening up a new world on analysis of crystal growth and defect distribution. The collaboration between numerical simulation and experiment is a key issue to encourage the development of quantitative understanding and prediction of growth process and distribution of defects in crystals. Such collaboration can provide solutions to remove defects from crystals efficiently.