[9p-S422-1~13] 15.1 Bulk crystal growth

[9p-S422-9] Determination of Experimental Condition of InGaSb Crystal Growth on International Space Station and Diffusion Coefficient by Using Numerical Simulation

〇Yasunori Okano¹, Xin Jin¹, Takuya Yamamoto², Atsushi Sekimoto¹, Yasuhiro Hayakawa³, Yuko Inatomi⁴ (1.Osaka Univ, 2.Tohoku Univ., 3.Shizuoka Univ., 4.JAXA)

Keywords:Numerical simulation, Micro-gravity experiment, Mixed alloy

Numerical simulation studey was performed to deterne the heating rate for the crystal growth experiment by using GaSb/InSb/GaSb sandwich strucre setup in the International Space Station. Experimental result was well agreed the expection by the mumerical simulation and upper feed crystal was remained as unmelted. Calculated value of difusion coefficient of GaSb into InSb melt was suggested as 1/5 value of the previousely reported one.