The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

22 Joint Session M ”Phonon Engineering” » 22.1 Joint Session M "Phonon Engineering"

[9p-W371-1~16] 22.1 Joint Session M "Phonon Engineering"

Sat. Mar 9, 2019 1:45 PM - 6:15 PM W371 (W371)

Yoshiaki Nakamura(Osaka Univ.), Takanobu Watanabe(Waseda Univ.), Hiroya Ikeda(Shizuoka Univ.)

5:45 PM - 6:00 PM

[9p-W371-15] Heat flow switching devices operated with bias voltage

〇(M1)Takuya Matsunaga1, Keisuke Hirata1, Masaharu Matsunami1, Tsunehiro Takeuchi1 (1.Toyota Tech. Inst.)

Keywords:heat flow switching device, thermal management, thermal conductivity

In this study, we developed a heat flow switching device using semiconductors characterized by very small thermal conductivity. Its electron thermal conductivity was controlled by the bias voltage. We succeeded in observing 50% increase of heat flow in the capacitor type heat flow switching device.