[9p-W611-1~8] 16.3 シリコン系太陽電池

[9p-W611-7] Counter doping of boron doped a-Si by plasma ion implantation—the dependence of passivation quality of counter-doped n-a-Si films on boron concentration—

〇(P)Tu ThiCam Huynh¹、Koichi Higashimine¹、Noboru Yamaguchi²、Hideo Suzuki²、Keisuke Ohdaira¹、Hideki Matsumura¹ (1.JAIST、2.ULVAC)

キーワード：IBC c-Si solar cell, counter doping, plasma ion implantation