Erika Maeda

→ Search for Erika Maeda in Google Scholar

Speaker, Author, Co-Author

Thu. Sep 10, 2020 1:00 PM - 5:30 PM Z04

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

3:45 PM - 4:00 PM

△ [10p-Z04-11] Comparison of characteristics of HfAlO_x, HfSiO_x, AlSiO_x, Al₂O₃, and HfO₂ gate dielectrics for GaN power devices

〇(M2)Erika Maeda^1,2, Toshihide Nabatame², Masafumi Hirose^1,2, Mari Inoue², Akihiko Ohi², Naoki Ikeda², Koji Shiozaki³, Tamotsu Hashizume⁴, Hajime kiyono¹ (1.SIT, 2.NIMS, 3.Nagoya Univ., 4.Hokkaido Univ.)