14:00 〜 14:15 ▲ [8p-Z08-5] Spin transport in Si-based spin metal-oxide-semiconductor field-effect transistors: Spin drift effect in the inversion channel and spin relaxation in the n+-Si source/drain regions 〇(PC)Shoichi Sato1,2、Shota Okamoto1、Masaaki Tanaka1,2、Ryosho Nakane1 (1.Tokyo Univ.、2.CSRN)