Taisuke Fujisawa

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Speaker, Author, Co-Author

Wed. Sep 9, 2020 1:00 PM - 6:00 PM Z12

Oral presentation
| 15 Crystal Engineering
| 15.5 Group IV crystals and alloys

[9p-Z12-1~19] 15.5 Group IV crystals and alloys

5:30 PM - 5:45 PM

[9p-Z12-18] Channel direction dependence of hole mobility in strained Si/relaxed SiGe/Si(110) heterostructure p-MOSFET

〇(M1)Taisuke Fujisawa¹, Atsushi Onogawa¹, Daichi Namiuchi¹, Yuichi Sano¹, Daisuke Izumi¹, Junji Yamanaka¹, Kosuke Hara¹, Kentarou Sawano², Kiyokazu Nakagawa¹, Keisuke Arimoto¹ (1.Yamanashi Univ., 2.ARL Tokyo City Univ.)

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