Naohisa Inoue

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Speaker, Author, Co-Author

Fri. Sep 11, 2020 12:30 PM - 5:15 PM Z12

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[11p-Z12-1~17] 15.7 Crystal characterization, impurities and crystal defects

4:30 PM - 4:45 PM

[11p-Z12-15] Quality of silicon substrate and point defects (4) Precipitate nucleation and vacancy

〇Naohisa Inoue¹ (1.Osaka Prefecture Univ.)

4:45 PM - 5:00 PM

[11p-Z12-16] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal (17) Various nitrogen states, STD and multiple absorption peaks

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Prefecture Univ.)

5:00 PM - 5:15 PM

[11p-Z12-17] Measurement of carbon concentration in silicon crystal
(XXI) Concentration reduction and improvement of infrared absorption measurement for carbon engineering

〇Naohisa Inoue¹, Shuichi Okuda¹, Shuichi Kawamata¹ (1.Osaka Prefecture Univ.)