Oral presentation

9 Applied Materials Science » 9.3 Nanoelectronics

[9p-Z26-1~14] 9.3 Nanoelectronics

Wed. Sep 9, 2020 1:00 PM - 5:15 PM Z26

Katsuhiko Nishiguchi(NTT), Yasuhisa Naitoh(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:00 PM - 1:15 PM

△ [9p-Z26-1] Non-uniform gate-capacitance distribution in the multi-dot single-electron devices due to three-dimensional structure of dots

〇Takayuki Gyakushi¹, Yuki Asai¹, Beommo Byun¹, Ikuma Amano¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Graduate School of IST., Hokkaido Univ.)

1:15 PM - 1:30 PM

[9p-Z26-2] Design of single-electron circuit based on Dijkstra’s algorithm

〇Masaki Ueno¹, Takahide Oya¹ (1.Yokohama National Univ.)

1:30 PM - 1:45 PM

[9p-Z26-3] Fluctuation Redundant Single-Electron Full Adder with Symmetrical and Simple Structure

〇Risa Kaide¹, Takahide Oya¹ (1.Yokohama National Univ.)

1:45 PM - 2:00 PM

[9p-Z26-4] Study of single-electron amoeba circuit to solve traveling salesman problem

〇Takuya Matsuoka¹, Takahide Oya¹ (1.Yokohama National Univ.)

2:00 PM - 2:15 PM

[9p-Z26-5] Design of single-electron information-processing circuit
modeled on behavior of fish shoals

〇Hideto Yamashita¹, Takahide Oya¹ (1.Yokohama National Univ.)

2:15 PM - 2:30 PM

[9p-Z26-6] Design of new single-electron circuit for representation of fluid model

〇Tomohiro Sumino¹, Takahide Oya¹ (1.Yokohama Nat'l Univ.)

2:45 PM - 3:00 PM

[9p-Z26-7] Fabrication of single-electron devices in use of shadow evaporation combined with in-situ atomic-layer deposition

〇(M2)Takehiro Koike¹, Hiroki Konno¹, Mizugaki Yoshinao¹, Shimada Hiroshi¹, Masanori Miura², Kensaku Kanomata², Fumihiko Hirose² (1.Univ. Electro-Communications, 2.Yamagata Univ.)

3:00 PM - 3:15 PM

[9p-Z26-8] Investigation of Filaments of Lateral-type TaOx-ReRAM using Nanogap Structures

〇Yasuhisa Naitoh¹, Touru Sumiya¹, Hisashi Shima¹, Hiroyuki Akinaga¹ (1.AIST)

3:15 PM - 3:30 PM

[9p-Z26-9] Formation of Multi-Terminal Nano-Electrodes by AC Electromigration During Metal Evaporation

〇Takuya Abe^1,3, Hiroshi Suga¹, Kazuhito Tsukagoshi², Yasuhisa Naitoh³ (1.CIT, 2.WPI-MANA NIMS, 3.AIST)

3:30 PM - 3:45 PM

[9p-Z26-10] Formation of Microstructures for Nano-gap Electrode Patterns Using Ion Milling

〇Kazuki Otsu^1,3, Hiroshi Suga¹, Kazuhito Tsukagoshi², Touru Sumiya³, Hisashi Shima³, Yasuhisa Naitoh³ (1.CIT, 2.WPI-MANA NIMS, 3.AIST)

3:45 PM - 4:00 PM

▲ [9p-Z26-11] Study on the Cooper-pair transistor as a fast supercurrent switch

〇(D)Jutarat Tanarom¹, Hiroshi Shimada¹ (1.Univ.Electro-Commun.)

4:00 PM - 4:15 PM

[9p-Z26-12] Fabrication and characterization of nanostructure-embedded Si MOSFET for nano-artifact-metrics

〇Shintaro Mizuno¹, Renpeng Lu¹, Katsumi Shimizu¹, Xiang Yin¹, Yosuke Ueba², Mikio Ishikawa², Mitsuru Kitamura², Morihisa Hoga³, Seiya Kasai¹ (1.RCIQE, Hokkaido Univ., 2.DNP, 3.AIST)

4:15 PM - 4:30 PM

[9p-Z26-13] Theoretical study of reflectometry for fast sensing of an SOI FET sensor

〇Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (1.NTT Basic Res. Labs.)

4:30 PM - 5:15 PM

▲ [9p-Z26-14] [Fellow International 2020 Special Lecture] Materials science leading to InGaN templates for Red-emitting micro LEDs

〇Lars Samuelson¹ (1.Lund Univ.)

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