Fabrication and electric characterization of AlGaN pn diode<br />with a n-ZnO tunnel layer at the p-type contact

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Thu. Sep 10, 2020 9:00 AM - 11:30 AM Z02

Ryuji Katayama(Osaka Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.)

9:00 AM - 9:15 AM

〇(M2)Zheng Sun¹, Masaya Daikoku¹, Jun Morimoto¹, Takeyoshi Tajiri¹, Kazuo Uchida¹ (1.UEC)

Keywords:AlGaN LED, n-ZnO/p-GaN tuunel junction