[10a-Z04-1~9] 13.7 Compound and power electron devices and process technology

[10a-Z04-1] Two-dimensional characterization of Au/Ni/n-GaN Schottky contacts with different surface treatments by scanning internal photoemission microscopy

〇Kenji Shiojima¹, Roy Tanaka², Shinya Takashima², Katsunori Uno², Masaharu Edo² (1.Univ. of Fukui, 2.Fuji electric co.)

Keywords:GaN, Schottky contact, scanning internal photoemission microscopy

SIPM measurement was conducted for Au/Ni/n-GaN Schottky contats with different surface treatments. The contacts with the surface treatment A showed good unformity after annealing at 400 C. However, the contacts with B exhibited poor I-V and nonuniformity.