[10a-Z08-1~10] 10.2 スピン基盤技術・萌芽的デバイス技術

▼ [10a-Z08-10] Enhanced unidirectional spin Hall magnetoresistance in Pt/Co system with Cu spacer

〇Kento Hasegawa^1,2、Tomohiro Koyama^2,3、Daichi Chiba^2,3 (1.The Univ. of Tokyo、2.ISIR, Osaka Univ.、3.CSRN, Osaka Univ.)

キーワード：spin Hall effect, magnetoresistance, unidirectional

Magnetoresistance is a central theme in spintronics and its enhancement is a critical issue. Recently discovered unidirectional spin Hall magnetoresistance (USMR) is completely different from common magnetoresistances because of its distinctive property; it is odd in current and magnetization direction. The modulation of interface resistance induced by spin accumulation is one of the mechanisms, in analogy to giant magnetoresistance. In this study, we have investigated the USMR in Pt/Cu/Co system, where Cu/Co interface has strong spin-dependent scattering potential, to clarify the role of interface structure.