[10a-Z08-1~10] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [10a-Z08-5] Electrical manipulation of an anomalous Hall effect in the Weyl antiferromagnet Mn₃Sn

〇Tomoya Higo^1,2、Hanshen Tsai^1,2、Kouta Kondou^2,3、Takuya Nomoto^2,4、Akito Sakai^2,5、Ayuko Kobayashi¹、Takafumi Nakano^2,6、Kay Yakushiji^2,6、Ryotaro Arita^2,3,4、Shinji Miwa^1,2,7、Yoshichika Otani^1,2,3,7、Satoru Nakatsuji^1,2,5,7,8 (1.ISSP, UTokyo、2.JST CREST、3.RIKEN CEMS、4.Dept. of Appl. Phys., UTokyo、5.Dept. of Phys., UTokyo、6.AIST、7.Trans-Quantum Science Institute, UTokyo、8.Johns Hopkins Univ.)

キーワード：Weyl, Anomalous Hall effect, Antiferromagnet

The Weyl antiferromagnet Mn₃Sn is a promising material for antiferromagnetic spintronics since it shows large electrical, thermal, optical responses due to unique magnetic and topological electronic structures despite their negligible magnetization. In this study, we performed the electrical switching of an antiferromagnetic spin texture and its detection by AHE at room temperature in Mn₃Sn polycrystalline thin films. Using bilayer devices composed of Mn₃Sn and nonmagnetic heavy metals, we found that an electrical current density in nonmagnetic metals of about 10¹⁰ to 10¹¹ A/m² can induce magnetic switching with a large change in Hall voltage due to the spin-orbit torque. Moreover, our magneto-transport measurements of the Mn₃Sn thin films revealed that the electrical switching of the AHE signal indicates electrical manipulation of the topological antiferromagnetic state and of the distribution of Weyl points in momentum space.