[10a-Z08-1~10] 10.2 スピン基盤技術・萌芽的デバイス技術

▲ [10a-Z08-9] Measurement of magnetization switching using nonresonant spin rectification effect

〇Motomi Aoki¹、Yuichiro Ando¹、Ryo Ohshima¹、Ei Shigematsu¹、Teruya Shinjo¹、Masashi Shiraishi¹ (1.Kyoto Univ.)

キーワード：spin orbit torque, spin rectification effect, magnetization switching

Magnetization switching using spin orbit torque (SOT) has been investigated intensively, because it enables a low power consumption and high endurance magnetoresistive random access memory. For a ferromagnet with in-plane magnetic anisotropy, fabrication of spin valves such as a magnetic tunnel junction is generally required. Such additional and complicated fabrication procedures impede a wide variety of material search for spin orbit materials. In this study, we demonstrated in-plane magnetization switching of a single Ni₈₀Fe₂₀ (Py) layer on platinum (Pt) layer by using nonresonant spin rectification effect (SRE). We found that nonresonant SRE was enhanced under the irradiation of microwave with a frequency lower than FMR condition. By using enhanced nonresonant SRE, we demonstrated the detection of in-plane magnetization switching using SOT. In the presentation, we will also report the origin of the enhancement of nonresonant SRE.