[10a-Z15-1~14] 13.9 Compound solar cells

▼ [10a-Z15-7] Experimental demonstration of the generalized reciprocity relation in p-i-n junction solar cells

〇(M2)Supawan Ngamprapawat¹, Kasidit Toprasertpong¹, Hassanet Sodabanlu², Riko Yokota¹, Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^1,2 (1.Univ. Tokyo, 2.RCAST)

Keywords:optoelectronic reciprocity relation, multiple quantum well solar cells, p-i-n junction solar cells

The optoelectronic reciprocity relation is a useful theorem in enhancing our understanding of the mechanisms in solar cells. This relation, which was first derived for the p-n junction diodes with the assumption based on the original Donolato’s theorem, reveals the connection between the electroluminescence (EL) and the short-circuit external quantum efficiency (EQE). However, this reciprocity relation is invalid in the solar cells with p-i-n configuration, for instance, amorphous silicon and quantum structures. The generalized reciprocity relation applicable for both p-n and p-i-n junctions, proposed by our group, has been derived based on the generalized Donolato’s theorem. In this study, the generalized reciprocity theorem has been experimentally verified through the absolute EL and the voltage-dependent EQE measurements of the specifically designed InGaAs/GaAsP multiple quantum well solar cells. To which extent this reciprocity relation is applicable is also discussed.