[10a-Z18-1~10] 3.11 Photonic structures and phenomena

△ [10a-Z18-2] Impact of fabrication errors in Eu-doped GaN two-dimensional photonic crystal cavities on threshold material gains

〇Takenori Iwaya¹, Shuhei Ichikawa¹, Masato Murakami¹, Jun Tatebayashi¹, Yasufumi Fujiwara¹ (1.Osaka Univ.)

Keywords:photonic crystal, gallium nitride, rare earth

We try to realize an Eu-doped GaN red laser diode with a two-dimensional photonic crystal nanocavity, but have not yet achieved laser oscillation. In this study, we perform finite difference time domain (FDTD) method and simulate for various photonic crystal nanocavity structures and calculate the material gain required for laser oscillation to investigate the suitable structure for GaN:Eu laser oscillation.