The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 10, 2020 9:00 AM - 12:15 PM Z20

Yutaka Furubayashi(Kochi Univ. of Tech.), Hiroyuki Nishinaka(Kyoto Inst. of Tech.)

11:30 AM - 11:45 AM

[10a-Z20-10] Repeated bending durability characterization of oxide thin films toward flexible device applications

Toshihiro Kumatani1, Kazuyori Oura1, Hideo Wada1, Masatoshi Koyama1, Toshihiko Maemoto1, Shigehiko Sasa1 (1.Osaka Inst. of Tech.)

Keywords:Flexible devices, Oxide thin films, Repeated bending durability characterization

我々はこれまでフレキシブル基板上に酸化亜鉛(ZnO)薄膜を形成し,曲率半径を変化させたときの曲げ耐性評価やアルミニウムを添加した酸化亜鉛(AZO)の低温形成について研究を行ってきた.今回,フレキシブル基板上にバッファ層,ZnOおよびAZO薄膜を形成した様々な異なる積層構造を作製して繰り返し曲げ耐久試験を行い,表面状態の観察とともに抵抗値の変化について詳しく調べたのでそれらの結果について報告する.