[10a-Z20-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-Z20-12] [The 42nd JSAP Young Scientist Award Speech] Hot carrier effects in InGaZnO thin-film transistor

〇Takanori Takahashi¹, Ryoko Miyanaga¹, Mami N. Fujii¹, Jun Tanaka², Kazushige Takechi², Hiroshi Tanabe², Juan Paolo Bermundo¹, Yasuaki Ishikawa^1,3, Yukiharu Uraoka¹ (1.NAIST, 2.Tianma Japan, Ltd., 3.Aoyama Gakuin Univ.)

Keywords:oxide semiconductor, thin-film transistor, reliability