[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

[10a-Z24-1] Interfacial dielectric properties of Y:HfO₂ epitaxial thin films directly on Si substrate

〇Yuki Saho¹, Takarae Syuya¹, Takada Kenshi¹, Yoshimura Takeshi¹, Fujimura Norifumi¹ (1.Osaka Pref. Univ.)

Keywords:HfO2, Epitaxial growth, Interface state

HfO₂-based ferroelectrics have been attracting attention because they show ferroelectricity even in ultra-thin films of 10 nm or less by stabilizing the orthorhombic phase and are highly compatible with CMOS processes. However, problems such as the characteristic distribution between devices due to polycrystalline growth and the increase in threshold voltage caused by the formation of the interface layer at the HfO₂/Si interface have become apparent. Therefore, the technique of suppressing the formation of the interface layer and the interface state and epitaxially growing the orthorhombic HfO₂ directly on Si is extremely important. In this talk, I investigated the interfacial dielectric properties of Y:HfO₂ epitaxial thin films directly on Si substrate.