[10a-Z24-1~12] 【CS.5】 Code-sharing Session of 6.1 & 13.3 & 13.5

▲ [10a-Z24-10] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO₂ films

〇(D)Xuan Luo¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

Keywords:antiferroelectricity, dielectrics, scalability

In this work, the thickness dependence of the antiferroelectricity (AFE) in ALD-grown ZrO₂ thin films is investigated in order to examine the scalability of AFE ZrO₂ films. The AFE-like characteristics were observed from the films with 5.3nm for different PMA temperatures. The influence of film thickness and PMA temperature on AFE-characteristics of ZrO₂ are discussed.