[10a-Z24-1~12] 【CS.5】 6.1 強誘電体薄膜、13.3 絶縁膜技術、13.5 デバイス／配線／集積化技術のコードシェアセッション

▲ [10a-Z24-10] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO₂ films

〇(D)Xuan Luo¹、Kasidit Toprasertpong¹、Mitsuru Takenaka¹、Shinichi Takagi¹ (1.Univ. of Tokyo)

キーワード：antiferroelectricity, dielectrics, scalability

In this work, the thickness dependence of the antiferroelectricity (AFE) in ALD-grown ZrO₂ thin films is investigated in order to examine the scalability of AFE ZrO₂ films. The AFE-like characteristics were observed from the films with 5.3nm for different PMA temperatures. The influence of film thickness and PMA temperature on AFE-characteristics of ZrO₂ are discussed.