[10a-Z29-1~14] 17.3 Layered materials

[10a-Z29-10] Development of TMD doping method by atomic implantation and its device application

〇(M2)Yuya Murai¹, Zheng Liu², Toshifumi Irisawa², Yasumitsu Miyata³, Ryo Kitaura¹ (1.Nagoya Univ., 2.AIST, 3.Tokyo Metropolitan Univ.)

Keywords:transition metal dichalcogenide, semiconductor, doping

The purpose of this study is to establish a highly accurate dopant introduction method to atomic layers, especially transition metal dichalcogenide (TMD) atomic layers. Control of p-type and n-type by introducing a dopant is one of the most important technologies in semiconductor devices. In this study, we focused on low energy atomic beam irradiation as a highly controllable doping method applicable to TMD atomic layer and investigated its effectiveness. In this presentation, we have fabricated p-type semiconductors by doping Nb atoms into single to several layers WSe2.