The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[10a-Z29-1~14] 17.3 Layered materials

Thu. Sep 10, 2020 8:30 AM - 12:15 PM Z29

Hitoshi Wakabayashi(Tokyo Tech)

10:00 AM - 10:15 AM

[10a-Z29-7] CVD synthesis of various polygonal-shaped h-BN single crystals<gdiv></gdiv>

〇(P)Kamal Prasad Sharma1, Aliza K. Sharma1, Takahiro Maruyama1 (1.Meijo Univ.)

Keywords:hexagonal boron nitride (h-BN), Chemical vapor depositon, Crystal growth

Hexagonal boron nitride (h-BN), a structural analogue of graphene, is a wide bandgap 2D insulating layered material, consisting of alternating sp2–bonded boron and nitrogen atoms. h-BN shows appealing properties such as thermally stable in air up to 800oC, chemical inertness, stable thermal conductivity, and superior elastic properties, and hence has drawn significant attention as a promising material in frontier applications. Although chemical vapor deposition (CVD) technique has developed as the most scalable process to synthesize h-BN on transition metals, the formation of various polygonal-shaped single domain is unclear and are still limited to few microns in their edge length. In this research, we study the growth kinetics of h-BN crystals larger than 25um via morphological transition.<gdiv></gdiv>