4:30 PM - 4:45 PM
[10p-Z02-13] A study of electronic properties on n type GaN by micro-Raman imaging in high temperatures
Keywords:photophysical properties, semiconductor
GaN crystal has been developed as a high-power vertical inverter device with low loss and high-speed switching characteristics. However, since wide-gap semiconductors are generally operated at the higher temperatures than 200℃ in EV, it has been pointed out that the reliability is lowered. In this study, we perform Raman imaging measurements on n-type GaN crystal and obtain the electronic density of n-type GaN crystal with the low impurity concentration in the high temperatures by spectral analysis, and it has been compared with the case of high impurity concentration.