The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10p-Z02-1~22] 15.4 III-V-group nitride crystals

Thu. Sep 10, 2020 1:00 PM - 7:15 PM Z02

Narihito Okada(Yamaguchi Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

6:45 PM - 7:00 PM

[10p-Z02-21] Micro-Photoluminescence of Surface Plasmon Enhanced Blue Emissions from polar/semipolar InGaN/GaN

Kento Ikeda1, Jun Kametani1, Tetsuya Matsuyama1, Kenji Wada1, Narihito Okada2, Kazuyuki Tadatomo2, Koichi Okamoto1 (1.Osaka Pref. Univ., 2.Yamaguchi Univ.)

Keywords:Surface plasmon, InGaN/GaN, Semipolar

The emission mechanism of InGaN/GaN quantum wells is greatly affected by the quantum confined Stark effect (QCSE), and the emission efficiency is significantly reduced at emission wavelengths from blue to green. In this study, we performed PL measurement by using Ag or Al coated samples to examine the effect on the blue emission from InGaN/GaN when the QCSE was reduced by using the polarity of the GaN substrate in the emission enhancement using surface plasmon resonance.