The 81st JSAP Autumn Meeting, 2020

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Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[10p-Z02-1~22] 15.4 III-V-group nitride crystals

Thu. Sep 10, 2020 1:00 PM - 7:15 PM Z02

Narihito Okada(Yamaguchi Univ.), Ryota Ishii(Kyoto Univ.), Hideaki Murotani(Tokuyama College)

3:00 PM - 3:15 PM

[10p-Z02-8] Standalone High-Quality GaN Substrates grown on ScAlMgO4 Substrate using SiO2-Wide-Mask-Patterns by HVPE

〇Takushi Kaneko1, Shogo Shingu1, Koichiro Yuki1, Ryo Inomoto1, Narihito Okada1, Kazuyuki Tadatomo1, Hiroyuki Iechi2, Gyo Yamamoto3, Hiroshi Ohno4, Akihiko Ishibashi4, Tsuguo Fukuda5 (1.Yamaguchi Univ., 2.Nihon Univ., 3.Microsystem Co. Ltd., 4.Panasonic Corporation, 5.Fukuda Crystal Tech. Lab. Co., Ltd.)

Keywords:HVPE, SCAM Substrate, Standalone GaN Substrate