[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

△ [10p-Z04-13] Impact of AlGaN Barrier Layer on p-GaN for Characterization of MIS Electrical Properties

〇(M2)Yuhei Wada¹, Hidetoshi Mizobata¹, Mikito Nozaki¹, Takuji Hosoi¹, Tetsu Kachi², Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Nagoya Univ.)

Keywords:GaN, Gate insulator

In order to realize a metal-insulator-semiconductor (MIS) GaN power device, interface characteristics of insulator/GaN has been researched. While high-quality interfaces have been reported for n-GaN MIS strucure, accumulation of capacitance has not been confirmed for the p-GaN MIS capacitor, and even detailed evaluation is difficult. In this study, an AlGaN/p-GaN structure was formed using AlGaN as a barrier layer, and p-GaN MIS characteristics were evaluated.