[10p-Z04-1~17] 13.7 Compound and power electron devices and process technology

[10p-Z04-4] Buffer Layer Structure Dependence of Electrical Characteristics of AlGaN/GaN HEMTs Fabricated on GaN substrates

〇Hidemasa Takahashi¹, Yuji Ando¹, Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:semiconductor, GaN, HEMT

To maximize the potential of next-generation semiconductor GaN, we are developing GaN-HEMTs on GaN substrates. In this study, we investigated the effect of buffer layer structure on drain breakdown voltage and current collapse by using HEMT epi grown on GaN substrate with different structure of buffer layer. Both device with C-doped and Fe-doped buffers showed good characteristics