The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[10p-Z08-11~17] 10.3 Spin devices, magnetic memories and storages

Thu. Sep 10, 2020 4:00 PM - 6:00 PM Z08

Satoshi Iihama(Tohoku Univ.)

4:00 PM - 4:30 PM

[10p-Z08-11] [The 42nd JSAP Paper Award Speech] CoFeB/MgO-based magnetic tunnel junction directly formed on a flexible substrate

Shinya Ota1,2, Masaki Ono1, Hiroki Matsumoto1,2, Akira Ando2, Tsuyoshi Sekitani2, Ryuhei Kohno1, Shogo Iguchi1, Tomohiro Koyama2,1,3, 〇Daichi Chiba2,1,3 (1.The Univ. of Tokyo, 2.ISIR, Osaka Univ., 3.CSRN, Osaka Univ.)

Keywords:spintronics, flexible spintronics, magnetic tunnel junction

Here we succeeded in fabricating a CoFeB/MgO-based magnetic tunnel junction (MTJ) directly on an organic flexible substrate. As the annealing temperature increases, the tunnel magnetoresistance (TMR) ratio enhances and reaches up to ~200% at an annealing temperature of 450oC. The TMR ratio shows no change during and after a 1000-cycle application of a tensile strain larger than 1%. The magnetic anisotropy fields for the top and bottom CoFeB layers are linearly proportional to strain with almost the same rate as that in a single CoFeB film, suggesting that the expected strain is added on both CoFeB layers in the MTJ pillar from the stretched flexible substrate. The high TMR ratio and strain endurance demonstrated in this study show that the flexible MTJ structure is a promising candidate for a future wearable sensing device.