The 81st JSAP Autumn Meeting, 2020

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[10p-Z08-11~17] 10.3 Spin devices, magnetic memories and storages

Thu. Sep 10, 2020 4:00 PM - 6:00 PM Z08

Satoshi Iihama(Tohoku Univ.)

4:45 PM - 5:00 PM

[10p-Z08-13] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa/Co2MnSi bilayer

Kohey Jono1, Fumiaki Shimohashi1, Michihiko Yamanouchi2, Tetsuya Uemura1 (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ.)

Keywords:spintronics, spin orbit torque

A MnGa/Co2MnSi bilayer is expected to be a promising ferromagnetic electrode for a perpendicular magnetic tunnel junction (p-MTJ) with high tunnel magnetoresistance and high thermal stability due to the half-metallic nature of Co2MnSi (CMS) and relatively large perpendicular magnetic anisotropy (PMA) of MnGa. Although a p-MTJ with MnGa/CMS electrodes has been demonstrated, the thickness of MnGa was larger than 10 nm, which is not applicable to the spin-transfer-torque induced or spin-orbit-torque (SOT) induced magnetization switching. In this study, we clarified the magnetic properties and SOTswitching characteristics for an ultra-thin MnGa/CMS bilayer.