[10p-Z08-11~17] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▼ [10p-Z08-13] Spin-orbit-torque induced magnetization switching for an ultra-thin MnGa/Co₂MnSi bilayer

〇Kohey Jono¹、Fumiaki Shimohashi¹、Michihiko Yamanouchi²、Tetsuya Uemura¹ (1.IST, Hokkaido Univ.、2.RIES, Hokkaido Univ.)

キーワード：spintronics, spin orbit torque

A MnGa/Co₂MnSi bilayer is expected to be a promising ferromagnetic electrode for a perpendicular magnetic tunnel junction (p-MTJ) with high tunnel magnetoresistance and high thermal stability due to the half-metallic nature of Co₂MnSi (CMS) and relatively large perpendicular magnetic anisotropy (PMA) of MnGa. Although a p-MTJ with MnGa/CMS electrodes has been demonstrated, the thickness of MnGa was larger than 10 nm, which is not applicable to the spin-transfer-torque induced or spin-orbit-torque (SOT) induced magnetization switching. In this study, we clarified the magnetic properties and SOTswitching characteristics for an ultra-thin MnGa/CMS bilayer.