2020年第81回応用物理学会秋季学術講演会

講演情報

シンポジウム(口頭講演)

シンポジウム » 先端イオン源顕微鏡技術:ナノ材料・デバイス、生命科学への展開

[10p-Z15-1~10] 先端イオン源顕微鏡技術:ナノ材料・デバイス、生命科学への展開

2020年9月10日(木) 13:30 〜 17:45 Z15

米谷 玲皇(東大)、小川 真一(産総研)

14:00 〜 14:15

[10p-Z15-2] Graphene nanomesh patterned by helium ion beam milling towards the application of quantum devices

〇(P)Fayong Liu1、Manoharan Muruganathan1、Shinichi Ogawa2、Yukinori Morita2、Zhongwang Wang1、Marek Schmidt1、Hiroshi Mizuta1 (1.JAIST、2.AIST)

キーワード:Helium ion beam, graphene nanomesh, Coulomb blockade oscillation

Graphene quantum dots attract much interest to both fundamental physics and device engineering. However, in contrast to the silicon devices with two-dimensional electron gases, graphene has no bandgap to build the energy barrier for the gate modulated quantum dots performance. The most common method is to pattern the graphene into graphene nanoribbons (GNRs), which profits from the geometrically confined energy gap. In order to obtain larger geometrical confinement, the GNRs need to be smaller than 30 nm. On such a small scale, the substrate defects will significantly affect the transport properties of the GNR. Although the substrate can be removed to achieve the suspended structure, the suspended ultra-scaled GNR in sub-10 nm is quite challenging both in fabrication and characterization. From the recent report, graphene nanomesh (GNM) devices show an activation energy exponentially increment by decreasing the porosity, which can be treated as ultra-scaled GNRs arrays. In this study, we fabricated the graphene nanomesh devices by using the helium ion beam milling technique, and the coulomb blockade oscillation was observed at the low temperature, which leads the way to use GNM devices for the application of quantum devices.