[10p-Z15-1~10] Recent progress in Advanced Ion Microscopy: Application to nano materials / devices and life science

▲ [10p-Z15-4] Helium Ion Beam Induced Stress on Graphene Cantilever

〇(PC)Ahmed HAMMAM^1,2, Shinichi Ogawa³, Yukinori Morita³, Amit Banerjee², Manoharan Muruganathan², Hiroshi Mizuta² (1.Minia Univ, 2.JAIST, 3.AIST)

Keywords:Helium Ion Beam, Suspended Graphene, induced stress

Graphene is an extraordinary two dimensional (2D) material with superior electronic and mechanical properties. Due to its exceptional physical properties, graphene became a building block in different applications, such as nano-electronics, electro-mechanical sensors, and switches. Nano- and atomic-scale devices need high precision in material maneuvering. In this regard, helium ion milling (HIM)with a beam diameter of 0.25 nm is a promising fabrication technology for precisely controlled Graphene-based nano- and atomic-scale devices.
Despite its great advantage, imaging effect (due to He⁺ ions interaction with graphene sheet) and substrate effect (due to He⁺ ion interaction with substrate) are the main challenges facing the use of HIM technology for nano-scale graphene devices. Substrate effects such as ion forward scattering, backscattering, substrate swelling possibly can be mitigated to some extent by suspending graphene before milling. However, the minimum non-destructive dose for imaging is challenging due to the trade-off between the signal to noise ratio [1]. In this work, we investigate the imaging induced defects in by studying the evolution of stress-induced in graphene cantilever.