14:45 〜 15:00
▲ [10p-Z15-4] Helium Ion Beam Induced Stress on Graphene Cantilever
キーワード：Helium Ion Beam, Suspended Graphene, induced stress
Graphene is an extraordinary two dimensional (2D) material with superior electronic and mechanical properties. Due to its exceptional physical properties, graphene became a building block in different applications, such as nano-electronics, electro-mechanical sensors, and switches. Nano- and atomic-scale devices need high precision in material maneuvering. In this regard, helium ion milling (HIM)with a beam diameter of 0.25 nm is a promising fabrication technology for precisely controlled Graphene-based nano- and atomic-scale devices.
Despite its great advantage, imaging effect (due to He+ ions interaction with graphene sheet) and substrate effect (due to He+ ion interaction with substrate) are the main challenges facing the use of HIM technology for nano-scale graphene devices. Substrate effects such as ion forward scattering, backscattering, substrate swelling possibly can be mitigated to some extent by suspending graphene before milling. However, the minimum non-destructive dose for imaging is challenging due to the trade-off between the signal to noise ratio [1]. In this work, we investigate the imaging induced defects in by studying the evolution of stress-induced in graphene cantilever.
Despite its great advantage, imaging effect (due to He+ ions interaction with graphene sheet) and substrate effect (due to He+ ion interaction with substrate) are the main challenges facing the use of HIM technology for nano-scale graphene devices. Substrate effects such as ion forward scattering, backscattering, substrate swelling possibly can be mitigated to some extent by suspending graphene before milling. However, the minimum non-destructive dose for imaging is challenging due to the trade-off between the signal to noise ratio [1]. In this work, we investigate the imaging induced defects in by studying the evolution of stress-induced in graphene cantilever.