[10p-Z15-1~10] Recent progress in Advanced Ion Microscopy: Application to nano materials / devices and life science

▲ [10p-Z15-8] Negative magnetoresistance of helium-ion-irradiated graphene in the strong Anderson localization regime

Tatsuya Iwasaki¹, Manoharan Muruganathan², Masashi Akabori², Yoshifumi Morita³, Satoshi Moriyama¹, 〇Shinichi Ogawa⁴, Yutaka Wakayama¹, Hiroshi Mizuta^2,5, Shu Nakaharai¹ (1.NIMS, 2.JAIST, 3.Gunma Univ., 4.AIST, 5.Hitachi)

Keywords:Graphene, Helium ion irradiation, Magnetoresistance

The negative magnetoresistance (MR) in the helium-ion-irradiated graphene was characterized with a new device design to exclude the contribution from the non-irradiated graphene. The results indicate that the negative MR is caused in the ion-irradiated area and its magnitude follows the size of the irradiated area and the ion dose level. This study contributes to the development of graphene electronics and Anderson localization physics in Dirac materials.