First-principles calculations for the reaction processes at 4H-SiC/SiO<sub>2</sub> interface: The effect of wet oxidations

Tsunashi Shimizu; Toru Akiyama; Kohji Nakamura; Tomonori Ito; Hiroyuki Kageshima; Masashi Uematsu; Kenji Shiraishi

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 10, 2020 1:15 PM - 6:00 PM Z23

Sakiko Kawanishi(Tohoku Univ.), Munetaka Noguchi(Mitsubishi Electric), Takeshi Tawara(富士電機)

5:30 PM - 5:45 PM

[10p-Z23-15] First-principles calculations for the reaction processes at 4H-SiC/SiO₂ interface: The effect of wet oxidations

〇Tsunashi Shimizu¹, Toru Akiyama¹, Kohji Nakamura¹, Tomonori Ito¹, Hiroyuki Kageshima², Masashi Uematsu³, Kenji Shiraishi⁴ (1.Mie Univ., 2.Shimane Univ., 3.Keio Univ., 4.Nagoya Univ.)

Keywords:SiC, Interface, First-principles calculations

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Presentation information

[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-15] First-principles calculations for the reaction processes at 4H-SiC/SiO2 interface: The effect of wet oxidations

[10p-Z23-15] First-principles calculations for the reaction processes at 4H-SiC/SiO₂ interface: The effect of wet oxidations