[10p-Z23-1~16] 15.6 Group IV Compound Semiconductors (SiC)

[10p-Z23-6] Rate and profile optimization of 4H-SiC wafer etching using ClF₃ gas

Kenta Irikura¹, Masaya Hayashi¹, 〇Hitoshi Habuka¹, Yoshinao Takahashi², Tomohisa Kato³ (1.Yokohama Nat. Univ., 2.KANTO DENKA KOGYO, 3.AIST)

Keywords:SiC, ClF3, Wafer etching

In order to improve the SiC wafer productivity, 50 mm-diameter C-face 4H-SiC was etched using the ClF3 gas. In this study, the effect of gas concentration and the gas flow rate on the etchig rate uniformity is discussed.